- Totem pole basically an output driver circuit use to convert one level of voltage into another level of voltage. For example, you want to drive gate of MOSFET with the help of microcontroller output pin.The microcontroller output pin is generating a square wave of voltage level 5 volt and to fully drive mosfet gate of P-channel mosfet you need.
- Low Side MOSFET Gate Driver for 15A load current using totem pole (Push-Pull) configuration for battery operated? Using solid state relay in high load applications: DC Boost Converter (5v to 12v using LM2577) not powering load: using high and low switch together on a load.
The LED output driver is programmed to be either open-drain with a 25 mA current sink capability at 5 V or totem pole with a 25 mA sink, 10 mA source capability at 5 V. The PCA9685 operates with a supply voltage range of 2.3 V to 5.5 V and the inputs and outputs are 5.5 V tolerant. LEDs can be directly connected to the LED output (up to.
The single-channel isolated EiceDRIVER™ GaN gate driver IC family for high-voltage gallium nitride switches was developed to drive Infineon’s CoolGaN™ 600V e-mode HEMTs, allowing for higher system efficiency and power density, associated with improved robustness and reduced costs.
Key advantages when designing with Infineon’s tailor-made EiceDRIVER™ GaN gate driver ICs are the fast turn-on and turn-off switch slew rates in source and sink driving currents. Thanks to the extended common-mode transient immunity (CMTI) robustness, these gate drivers enable extremely fast switching.
The high-side EiceDRIVER™ GaN gate drivers ensure robust and highly efficient operation of the high-voltage gallium-nitride switch, and at the same time concurrently minimizing R&D efforts and shortening time-to-market.
Infineon’s isolated EiceDRIVER™ GaN gate driver ICs provide negative VGS voltage, which leads to safe off-states during switching transients. Additionally, it protects the GaN switch against spurious turn-on, even for the first pulse or after a burst mode operation.
Thanks to the integrated galvanic isolation, Infineon’s EiceDRIVER™ GaN gate driver ICs are best suited to drive high-voltage GaN HEMTs in hard-switching half-bridge applications, such as the totem-pole PFC topology. If the PWM signals have to cross the safe isolation barrier, such as in the resonant LLC with secondary-side control, the 1EDS5663H with reinforced isolation is the right choice.
High Side Mosfet Driver Circuit
Infineon’s gallium nitride CoolGaN™ 600V e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ GaN 1EDF5673K, 1EDF5673F and 1EDS5663H gate driver ICs.